5 research outputs found
Depletion-mode Quantum Dots in Intrinsic Silicon
We report the fabrication and electrical characterization of depletion-mode
quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use
fixed charge in a SiO/AlO dielectric stack to induce a 2DHG at the
Si/SiO interface. Fabrication of the gate structures is accomplished with a
single layer metallization process. Transport spectroscopy reveals regular
Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the
few- and many-hole regimes, respectively. This depletion-mode design avoids
complex multilayer architectures requiring precision alignment, and allows to
adopt directly best practices already developed for depletion dots in other
material systems. We also demonstrate a method to deactivate fixed charge in
the SiO/AlO dielectric stack using deep ultraviolet light, which
may become an important procedure to avoid unwanted 2DHG build-up in Si MOS
quantum bits.Comment: Accepted to Applied Physics Letters. 5 pages, 3 figure
A fabrication guide for planar silicon quantum dot heterostructures
We describe important considerations to create top-down fabricated planar
quantum dots in silicon, often not discussed in detail in literature. The
subtle interplay between intrinsic material properties, interfaces and
fabrication processes plays a crucial role in the formation of
electrostatically defined quantum dots. Processes such as oxidation, physical
vapor deposition and atomic-layer deposition must be tailored in order to
prevent unwanted side effects such as defects, disorder and dewetting. In two
directly related manuscripts written in parallel we use techniques described in
this work to create depletion-mode quantum dots in intrinsic silicon, and
low-disorder silicon quantum dots defined with palladium gates. While we
discuss three different planar gate structures, the general principles also
apply to 0D and 1D systems, such as self-assembled islands and nanowires.Comment: Accepted for publication in Nanotechnology. 31 pages, 12 figure